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DCR1110F52 Datasheet(PDF) 4 Page - Dynex Semiconductor

Part # DCR1110F52
Description  Phase Control Thyristor
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DCR1110F52 Datasheet(HTML) 4 Page - Dynex Semiconductor

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SEMICONDUCTOR
DCR1110F52
4/10
www.dynexsemi.com
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Test Conditions
Max.
Units
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25°C
1.5
V
VGD
Gate non-trigger voltage
At 50% VDRM, Tcase = 125°C
0.4
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25°C
350
mA
IGD
Gate non-trigger current
At 50% VDRM, Tcase = 125°C
10
mA
CURVES
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION
Where
A = -0.069834
B = 0.220863
VTM = A + Bln (IT) + C.IT+D.IT
C = 0.000638
D = -0.013352
these values are valid for Tj = 125°C for IT 300A to 4000A
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0.5
1.5
2.5
3.5
4.5
Instantaneous on-state voltage, VT - (V)
min 25°C
max 25°C
min 125°C
max 125°C


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