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DCR680N85 Datasheet(PDF) 7 Page - Dynex Semiconductor |
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DCR680N85 Datasheet(HTML) 7 Page - Dynex Semiconductor |
7 / 11 page SEMICONDUCTOR DCR680N85 7/11 www.dynexsemi.com 0 5 10 15 20 25 1 10 100 Pulse width, tP - (ms) 0 0.5 1 1.5 2 2.5 I 2t ITSM Conditions: Tcase= 125°C VR = 0 half-sine wave 1 10 1 10 100 Number of cycles Conditions: Tcase = 125°C VR =0 Pulse width = 10ms Fig.10 Single-cycle surge current Fig.11 Multi-cycle surge current 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 0 2 4 6 8 10 12 Rate of decay of on-state current, di/dt - (A/us) Q s max = 3667.9*(di/dt) 0.3917 Q s typical = 3158.5*(di/dt) 0.4161 Conditions: Tj = 125°C, V peak ~ 4400V Vrm ~ 2600V snubber as appropriate to control reverse voltage 0 50 100 150 200 250 0 2 4 6 8 10 12 Rate of decay of on-state current, di/dt - (A/us) IRRmax= 42.374*(di/dt) 0.7033 IRRtypical = 39.671*(di/dt) 0.7197 Conditions: Tj = 125°C, V peak ~ 4400V Vrm ~ 2600V snubber as appropriate to control reverse voltage Fig.12 Stored charge Fig.13 Reverse recovery current |
Similar Part No. - DCR680N85_15 |
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Similar Description - DCR680N85_15 |
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