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MAGX-000025-150000 Datasheet(PDF) 4 Page - M/A-COM Technology Solutions, Inc. |
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MAGX-000025-150000 Datasheet(HTML) 4 Page - M/A-COM Technology Solutions, Inc. |
4 / 7 page GaN on SiC HEMT Power Transistor 150 W, 1-2500 MHz Rev. V1 MAGX-000025-150000 4 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 4 Correct Device Sequencing Test Fixture Impedances (Per Side) F (MHz) ZIF(1,2) (Ω) ZOF(1,2) (Ω) 1200 0.8 + j0.5 9.4 + j4.1 1300 0.9 + j0.2 7.2 + j3.0 1400 0.5 - j0.2 5.4 + j3.4 2500 1.2 - j3.4 3.1 + j1.4 Turning the device ON 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage: [(300 µs, 20%) = 50 V; (2.5 GHz, CW) = 28 V]. 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS |
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Similar Description - MAGX-000025-150000_15 |
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