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TQP4M0013 Datasheet(PDF) 2 Page - TriQuint Semiconductor |
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TQP4M0013 Datasheet(HTML) 2 Page - TriQuint Semiconductor |
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2 / 6 page  TQP4M0013 High Isolation Absorptive SPST Switch Datasheet: Rev C 09-06-13 - 2 of 6 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Electrical Specifications Test conditions unless otherwise noted: VDD = +5 V, VCTRL = 0 V (low) or 3.3 V (high), Temp.=+25°C, 50 Ω system Parameter Conditions Min Typ Max Units Operational Frequency Range 100 4000 MHz Control Voltage (VCTRL) Low 0 0.2 V High 1.8 VDD V Insertion Loss 1 GHz 2 GHz 3 GHz 0.55 0.71 0.77 0.87 dB Isolation 1 GHz 2 GHz 3 GHz 38 50 43 37 dB RF1/RF2 Return Loss Insertion Loss State 1 GHz 2 GHz 3 GHz 15 15 17 dB RF2 Return Loss Isolation Loss State 1 GHz 2 GHz 3 GHz 16 15 17 dB Input P1dB f=1 GHz +35 dBm Input IP3 f=1 GHz Pin=+15 dBm/tone , Δf= 1 MHz +49 dBm Switching Speed tON,tOFF (50% CTL to 10/90% RF) 150 ns tON,tOFF (50% CTL to 2/98% RF) 150 ns Total Supply current (IDD) 82 uA Absolute Maximum Ratings Parameter Rating Storage Temperature -65 to 165°C RF Input Power, CW, 50Ω, T = 25°C +33 dBm Supply Voltage (VDD) +6 V Control Voltage (VCTRL) VDD+0.5 V Operation of this device outside the parameter ranges given above may cause permanent damage. Recommended Operating Conditions Parameter Min Typ Max Units VDD 3.0 5.0 V Operating Temp. Range -40 +85 °C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Switch Control Truth Table VCTRL Signal Path State (RF1 to RF2) Low Off (isolation) High On (Insertion Loss) Control Voltages State Bias Condition Low ≤ 0.2 V High ≥ 1.8 V |
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Similar Description - TQP4M0013 |
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