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TQM829007 Datasheet(PDF) 8 Page - TriQuint Semiconductor

Part # TQM829007
Description  0.6-1.0 GHz W Digital Variable Gain Amplifier
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Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

TQM829007 Datasheet(HTML) 8 Page - TriQuint Semiconductor

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TQM829007
0.6-1.0 GHz ¼ W Digital Variable Gain Amplifier
Datasheet: Rev H 05-02-14
- 8 of 10 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Pin Configuration and Description
LE
DATA
CLK
NC
GND
RFIN
GND
1
2
3
4
5
6
7
21
20
19
18
17
16
15
GND
GND
GND
GND
GND
RFOUT
GND
DSA
AMP1
Backside Pad
GND
S
P
I
DC Biasing
Matching
DC Biasing
AMP2
Pin No.
Label
Description
1
LE
Serial Latch Enable Input. When LE is high, latch is clear and content of SPI control
the attenuator. When LE is low, data in SPI is latched.
2
DATA
Serial data input. The data and clock pins allow the data to be entered serially into
SPI and is independent of Latch state.
3
CLK
Serial clock input.
4, 22
N/C
No connect or open. This pin is not connected in this module
6
RFIN
Input, matched to 50 ohms. Internally DC blocked.
8
VCC_AMP1
Supply Voltage to AMP1. This pin is connected internally to 2 bypass capacitors
(100 pF, 0.1 uF) followed by a 68 nH inductor inside the module.
14
VCC_AMP2
Supply Voltage to AMP2. This pin is connected internally to 2 bypass capacitors
(100 pF, 0.1 uF) followed by a 47 nH inductor inside the module.
16
RFOUT
Output matched to 50 ohms. Internally DC blocked.
28
VCC_SPI
SPI and DSA DC supply. Internal connection to 0.1 uF bypass capacitor.
5, 7, 9-13, 15,17-21, 23-27
GND
RF/DC Ground Connection
Backside Pad
GND
RF/DC Ground Connection
Evaluation Board PCB Information
TriQuint PCB 1080956 Material and Stack-up


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