RQK0302GGDQS_15 datasheet(3/9 Pages) RENESAS

Part #	RQK0302GGDQS

Description	Silicon N Channel MOS FET Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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Rev.3.00 Jun 22, 2006 page 1 of 6

RQK0302GGDQS

Silicon N Channel MOS FET

Power Switching

REJ03G1270-0300

Rev.3.00

Jun 22, 2006

Features

• Low on-resistance

RDS(on) = 81 m

Ω typ (V

GS = 10 V, ID = 1.9 A)

• Low drive current

• High speed switching

• 4.5 V gate drive

Outline

RENESAS package code: PLZZ0004CA-A

(Package name: UPAK

)

R

1. Gate

2. Drain

3. Source

4. Drain

1

2

3

4

D

2, 4

G

1

S

3

Note:

Marking is “GG”.

*UPAK is a trademark of Renesas Technology Corp.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

30

V

Gate to source voltage

VGSS

±20

V

Drain current

ID

3.8

A

Drain peak current

ID (pulse)

Note1

5.6

A

Body - drain diode reverse drain current

IDR

3.8

A

Channel dissipation

Pch

Note2

1.5

W

Channel dissipation

Pch (pulse)

Note1

5

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 1 s, duty cycle ≤ 1%

2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)

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