GaN HEMT Pulsed Power Transistor

2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle

MAGX-002731-100L00

Production V1

23 Aug 11

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice.

1

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology

Solutions is considering for development. Performance is based on target specifications, simu-

lated results, and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-

able. Commitment to produce in volume is not guaranteed.

Features

 GaN depletion mode HEMT microwave transistor

 Common source configuration

 Broadband Class AB operation

 Thermally enhanced Cu/Mo/Cu package

 RoHS Compliant

 +50V Typical Operation

Application

 Civilian and Military Pulsed Radar

Product Description

The MAGX-002731-100L00 is a gold metalized matched

Gallium Nitride (GaN) on Silicon Carbide RF power transistor

optimized for civilian and military radar pulsed applications

between 2700 - 3100 MHz. Using state of the art wafer

fabrication processes, these high performance transistors

provide high gain, efficiency, bandwidth, ruggedness over a

wide bandwidth for today’s demanding application needs. The

MAGX-002731-100L00 is constructed using a thermally

enhanced Cu/Mo/Cu flanged ceramic package which provides

excellent thermal performance. High breakdown voltages allow

for reliable and stable operation in extreme mismatched load

conditions unparalleled with older semiconductor technologies.

Ordering Information

MAGX-002731-100L00

100W GaN Power Transistor

MAGX-002731-SB2PPR

Evaluation Fixture

Typical RF Performance

Freq.

(MHz)

Pin

(W

Pout

(W Peak)

Gain

(dB)

Id-Pk

(A)

Eff

(%)

2700

7

109

12

4.2

51

2900

7

112

12

4.4

51

3100

7

109

12

4.2

52

Typical RF performance measured in M/A-COM RF test fixture.

Devices tested in common source Class-AB configuration as fol-

lows: Vdd=50V, Idq=500mA (pulsed), F=2.7—3.1 GHz,

Pulse=500us, Duty=10%.