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MAGX-002731-100L00 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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MAGX-002731-100L00 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 7 page GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle MAGX-002731-100L00 Production V1 23 Aug 11 • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simu- lated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail- able. Commitment to produce in volume is not guaranteed. Features GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation Thermally enhanced Cu/Mo/Cu package RoHS Compliant +50V Typical Operation MTTF of 114 years (Channel Temperature < 200°C) Application Civilian and Military Pulsed Radar Product Description The MAGX-002731-100L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed applications between 2700 - 3100 MHz. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-002731-100L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Ordering Information MAGX-002731-100L00 100W GaN Power Transistor MAGX-002731-SB2PPR Evaluation Fixture Typical RF Performance Freq. (MHz) Pin (W Pout (W Peak) Gain (dB) Id-Pk (A) Eff (%) 2700 7 109 12 4.2 51 2900 7 112 12 4.4 51 3100 7 109 12 4.2 52 Typical RF performance measured in M/A-COM RF test fixture. Devices tested in common source Class-AB configuration as fol- lows: Vdd=50V, Idq=500mA (pulsed), F=2.7—3.1 GHz, Pulse=500us, Duty=10%. |
Similar Part No. - MAGX-002731-100L00_15 |
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