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RJE0609JPD Datasheet(PDF) 5 Page - Renesas Technology Corp |
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RJE0609JPD Datasheet(HTML) 5 Page - Renesas Technology Corp |
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5 / 7 page  RJE0609JPD Preliminary REJ03G1908-0100 Rev.1.00 Page 5 of 6 Apr 01, 2010 Gate to Source Voltage vs. Shutdown Time of Load-Short Test Shutdown Time of Load-Short Test Pw (ms) Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width Gate to Source Voltage VGS (V) Shutdown Case Temperature vs. Gate to Source Voltage 50 Ω Vin Monitor D.U.T. Vin –10 V RL VDD = –30 V tr td(on) Vin 90% 90% 10% 10% Vout td(off) Vout Monitor 90% 10% tf Switching Time Test Circuit Waveform −16 −4 −6 −8 −10 −12 −14 −2 0 100 110 VDD = −16 V 10 1 0.1 0.01 10 μ 100 μ 1 m 10 m 100 m 1 10 DM P PW T D = PW T θch - c(t) = γs (t) • θch - c θch - c = 4.17°C/W, Tc = 25°C Tc = 25°C D = 1 0.5 0.01 0.02 0.05 0.1 0.2 1shot pulse 200 180 160 140 120 0 100 −2 −4 −6 −8 −10 ID = −1 A dv / dt VGS ≥ 500 V/ ms |
Similar Part No. - RJE0609JPD_15 |
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Similar Description - RJE0609JPD_15 |
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