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TGF2955 Datasheet(PDF) 10 Page - TriQuint Semiconductor |
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TGF2955 Datasheet(HTML) 10 Page - TriQuint Semiconductor |
10 / 19 page TGF2955 40 Watt Discrete Power GaN on SiC HEMT Datasheet: Rev A 10-20-14 - 10 of 19 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Model Load Pull Contours Vds = 32V, Idq = 150mA. 3dB compression referenced to peak gain. Simulated signal: 10% pulses. Bond wires not included. See page 17 for reference planes. 3GHz, Load-pull 46.3 46.1 45.9 23.6 23.1 22.6 68.1 63.1 58.1 •••• Max Power is 46.4dBm at Z = 12.053+2.704iΩ Ω Ω Ω Γ Γ Γ Γ = 0.1065+0.1095i •••• Max Gain is 23.9dB at Z = 4.996+9.254iΩ Ω Ω Ω Γ Γ Γ Γ = 0.0342+0.596i •••• Max PAE is 69% at Z = 12.443+9.972iΩ Ω Ω Ω Γ Γ Γ Γ = 0.2558+0.3307i Zo = 10Ω Ω Ω Ω Zs(fo) = 0.74+4.08iΩ Ω Ω Ω Zs(2fo) = 4.3Ω Ω Ω Ω Zs(3fo) = 4.3Ω Ω Ω Ω Zl(2fo) = 10Ω Ω Ω Ω Zl(3fo) = 10Ω Ω Ω Ω Power Gain PAE |
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