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TGF2955 Datasheet(PDF) 9 Page - TriQuint Semiconductor |
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TGF2955 Datasheet(HTML) 9 Page - TriQuint Semiconductor |
9 / 19 page TGF2955 40 Watt Discrete Power GaN on SiC HEMT Datasheet: Rev A 10-20-14 - 9 of 19 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Model Load Pull Contours Vds = 32V, Idq = 150mA. 3dB compression referenced to peak gain. Simulated signal: 10% pulses. Bond wires not included. See page 17 for reference planes. 1GHz, Load-pull 46.2 46 45.8 33.1 32.6 32.1 68.3 63.3 58.3 •••• Max Power is 46.3dBm at Z = 12.625-0.168iΩ Ω Ω Ω Γ Γ Γ Γ = 0.1161-0.0065i •••• Max Gain is 33.2dB at Z = 7.713+10.532iΩ Ω Ω Ω Γ Γ Γ Γ = 0.1658+0.496i •••• Max PAE is 70.5% at Z = 19.515+5.699iΩ Ω Ω Ω Γ Γ Γ Γ = 0.3467+0.1261i Zo = 10Ω Ω Ω Ω Zs(fo) = 1.64+12.34iΩ Ω Ω Ω Zs(2fo) = 12Ω Ω Ω Ω Zs(3fo) = 12Ω Ω Ω Ω Zl(2fo) = 10Ω Ω Ω Ω Zl(3fo) = 10Ω Ω Ω Ω Power Gain PAE |
Similar Part No. - TGF2955_15 |
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Similar Description - TGF2955_15 |
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