TGF2955_15 datasheet(9/19 Pages) TRIQUINT

Part #	TGF2955

Description	40 Watt Discrete Power GaN on SiC HEMT

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Manufacturer	TRIQUINT [TriQuint Semiconductor]

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9 / 19 page

TGF2955

40 Watt Discrete Power GaN on SiC HEMT

Datasheet: Rev A 10-20-14

- 9 of 19 -

Disclaimer: Subject to change without notice

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Model Load Pull Contours

Vds = 32V, Idq = 150mA. 3dB compression referenced to peak gain.

Simulated signal: 10% pulses. Bond wires not included. See page 17 for reference planes.

1GHz, Load-pull

46.2

46

45.8

33.1

32.6

32.1

68.3

63.3

58.3

•••• Max Power is 46.3dBm

at Z = 12.625-0.168iΩ

Ω

Γ

Γ = 0.1161-0.0065i

•••• Max Gain is 33.2dB

at Z = 7.713+10.532iΩ

Ω

Γ

Γ = 0.1658+0.496i

•••• Max PAE is 70.5%

at Z = 19.515+5.699iΩ

Ω

Γ

Γ = 0.3467+0.1261i

Zo = 10Ω

Ω

Zs(fo) = 1.64+12.34iΩ

Ω

Zs(2fo) = 12Ω

Ω

Zs(3fo) = 12Ω

Ω

Zl(2fo) = 10Ω

Ω

Zl(3fo) = 10Ω

Ω

Power

Gain

PAE

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