HMIC Silicon PIN Diode SP2T Switch with Integrated Bias Network

2 - 18 GHz

Rev. V2

MASW-011052

1

1

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macomtech.com for additional data sheets and product information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

1

Features

 Broad Bandwidth Specified up to 18 GHz

 Usable up to 26 GHz

 Integrated Bias Network

 Low Insertion Loss / High Isolation

 Fully Monolithic

 Glass Encapsulate Construction

 RoHS Compliant* and 260°C Reflow Compatible

Description

The MASW-011052 device is a SP2T broad band

switch with integrated bias networks utilizing

MACOM’s patented HMIC (Heterolithic Microwave

Integrated Circuit) process. This process allows the

incorporation of silicon pedestals that form series

and shunt diodes or vias by imbedding them in low

loss, low dispersion glass. By using small spacing

between elements, this combination of silicon and

glass gives HMIC devices low loss and high isolation

performance with exceptional repeatability through

low millimeter frequencies. Large bond pads

facilitate the use of low inductance ribbon bonds,

while gold backside metallization allows for manual

or automatic chip bonding via 80/20 - Au/Sn,

62/36/2 - Sn/Pb/Ag solders or electrically conductive

silver epoxy.

Pin

Function

J1

Antenna

J2

J3

J4

Bias of J2

J5

Bias of J3

J6

Bias Antenna

* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

Part Number

Package

MASW-011052-14220G

Die in Gel Pack

MASW-011052-14220W

Die in Waffle Pack

1. Die quantity varies.

Functional Diagram

J4

J5

L

L

C

C

C

C

C

C

SW1

SW2

J1

J3

J2

C

C

L

J6

2. The exposed metallization on the chip bottom must be

connected to RF, DC and thermal ground.