3

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com

Product Data Sheet

August 5, 2008

TABLE II

DC PROBE TESTS

Symbol

Parameter

Minimum Maximum

Value

Pinch-off Voltage

-1.5

-0.5

V

BVGS

Breakdown Voltage gate-source

-30

-8

V

BVGD

Breakdown Voltage gate-drain

-30

-8

V

TABLE III

RF CHARACTERIZATION TABLE

Symbol

Parameter

Test

Condition

Limit

Min Nom Max

Units

Gain

Small Signal Gain

F = 8 – 18 GHz

12

16

---

dB

IRL

Input Return Loss

F = 8 – 18 GHz

---

-18

-12

dB

ORL

Output Return Loss

F = 8 – 18 GHz

---

-20

-12

dB

TABLE IV

THERMAL INFORMATION

Parameter

Test Conditions

(

(

°C/W)

(Hours)

Resistance

(channel to backside of

carrier)

Vd = 4.5 V

Id = 50 mA

Pdiss = 0.225 W

89

85

4.1 E+8

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil

CuMo Carrier at 70

applied, 100% of DC power is dissipated.

TGA8399C