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TGA8014-SCC Datasheet(PDF) 6 Page - TriQuint Semiconductor |
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TGA8014-SCC Datasheet(HTML) 6 Page - TriQuint Semiconductor |
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6 / 10 page  TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet January 18, 2002 6 TABLE IV AUTOPROBE FET PARAMETER MEASUREMENT CONDITONS FET Parameters Test Conditions IDSS : Maximum drain current (IDS) with gate voltage (VGS) at zero volts. VGS = 0.0 V, drain voltage (VDS) is swept from 0.5 V up to a maximum of 3.5 V in search of the maximum value of IDS; voltage for IDSS is recorded as VDSP. Gm : Transconductance; I DSS − IDS 1 () VG1 For all material types, VDS is swept between 0.5 V and VDSP in search of the maximum value of Ids. This maximum IDS is recorded as IDS1. For Intermediate and Power material, IDS1 is measured at VGS = VG1 = -0.5 V. For Low Noise, HFET and pHEMT material, VGS = VG1 = -0.25 V. For LNBECOLC, use VGS = VG1 = -0.10 V. VP : Pinch-Off Voltage; VGS for IDS = 0.5 mA/mm of gate width. VDS fixed at 2.0 V, VGS is swept to bring IDS to 0.5 mA/mm. VBVGD : Breakdown Voltage, Gate-to-Drain; gate-to- drain breakdown current (IBD) = 1.0 mA/mm of gate width. Drain fixed at ground, source not connected (floating), 1.0 mA/mm forced into gate, gate-to-drain voltage (VGD) measured is VBVGD and recorded as BVGD; this cannot be measured if there are other DC connections between gate-drain, gate-source or drain-source. VBVGS : Breakdown Voltage, Gate-to-Source; gate-to- source breakdown current (IBS) = 1.0 mA/mm of gate width. Source fixed at ground, drain not connected (floating), 1.0 mA/mm forced into gate, gate-to- source voltage (VGS) measured is VBVGS and recorded as BVGS; this cannot be measured if there are other DC connections between gate-drain, gate-source or drain-source. TGA8014-SCC |
Similar Part No. - TGA8014-SCC_15 |
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Similar Description - TGA8014-SCC_15 |
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