4

TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com

Apr 2009 © Rev A

TGA4915-CP

TABLE III

THERMAL INFORMATION

Parameter

Test Conditions

(

°C)

(

°C/W)

(hours)

(Channel to Backside of

Package)

128

2.3

7.4 E+6

(Channel to Backside of

Package)

Vd = 8 V

Id = 7.1 A @ Psat

200

2.3

2.3 E+4

. Note: Carrier at 85 °C baseplate temperature. Worst case is at saturated output power

when DC power consumption rises to 57 W with 7 W RF power delivered to the load. Power

dissipated is 50 W and the temperature rise in the channel is 115 °C.

Median Lifetime (Tm) vs. Channel Temperature

1.E+04

1.E+05

1.E+06

1.E+07

1.E+08

1.E+09

1.E+10

1.E+11

1.E+12

1.E+13

25

50

75

100

125

150

175

200

Channel Temperature ( C)

FET3

°