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UD4306 Datasheet(PDF) 2 Page - Unitpower Technology Limited |
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UD4306 Datasheet(HTML) 2 Page - Unitpower Technology Limited |
2 / 7 page 2 UD4306 N-Ch and P-Ch Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.034 --- V/℃ VGS=10V , ID=15A --- 7 8.5 RDS(ON) Static Drain-Source On-Resistance 2 VGS=4.5V , ID=12A --- 8 10 m Ω VGS(th) Gate Threshold Voltage 1.0 1.5 2.5 V △ VGS(th) VGS(th) Temperature Coefficient VGS=VDS , ID =250uA --- -5.84 --- mV/℃ VDS=32V , VGS=0V , TJ=25℃ --- --- 1 IDSS Drain-Source Leakage Current VDS=32V , VGS=0V , TJ=55℃ --- --- 5 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ± 100 nA gfs Forward Transconductance VDS=5V , ID=15A --- 12 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.4 2.8 Ω Qg Total Gate Charge (4.5V) --- 28 --- Qgs Gate-Source Charge --- 7.85 --- Qgd Gate-Drain Charge VDS=20V , VGS=4.5V , ID=12A --- 12.5 --- nC Td(on) Turn-On Delay Time --- 20.2 --- Tr Rise Time --- 11.8 --- Td(off) Turn-Off Delay Time --- 84.8 --- Tf Fall Time VDD=15V , VGS=10V , RG=3.3Ω ID=1A --- 8.6 --- ns Ciss Input Capacitance --- 3354 --- Coss Output Capacitance --- 275 --- Crss Reverse Transfer Capacitance VDS=15V , VGS=0V , f=1MHz --- 204 --- pF Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=25V , L=0.1mH , IAS=30A 77.4 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 --- --- 65 A ISM Pulsed Source Current 2,6 VG=VD=0V , Force Current --- --- 130 A VSD Diode Forward Voltage 2 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=47A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics |
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