UD4301 datasheet(3/7 Pages) UNITPOWER

Part #	UD4301

Description	N-Ch and P-Ch Fast Switching MOSFETs

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Manufacturer	UNITPOWER [Unitpower Technology Limited]

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N-Ch and P-Ch Fast Switching MOSFETs

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-40

---

V

△

BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25℃ , ID=-1mA

---

-0.015

---

V/℃

VGS=-10V , ID=-8A

---

52

65

RDS(ON)

Static Drain-Source On-Resistance

2

VGS=-4.5V , ID=-4A

---

80

100

m

Ω

VGS(th)

Gate Threshold Voltage

-1.0

-1.6

-2.5

V

△

VGS(th)

VGS(th) Temperature Coefficient

VGS=VDS , ID =-250uA

---

3.52

---

V/℃

VDS=-32V , VGS=0V , TJ=25℃

---

1

IDSS

Drain-Source Leakage Current

VDS=-32V , VGS=0V , TJ=55℃

---

5

uA

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

±

100

nA

gfs

Forward Transconductance

VDS=-10V , ID=-10A

---

6

---

S

Qg

Total Gate Charge (-4.5V)

---

5.8

---

Qgs

Gate-Source Charge

---

1.18

---

Qgd

Gate-Drain Charge

VDS=-20V , VGS=-4.5V , ID=-8A

---

2.12

---

nC

Td(on)

Turn-On Delay Time

---

13.2

---

Tr

Rise Time

---

8

---

Td(off)

Turn-Off Delay Time

---

40.4

---

Tf

Fall Time

VDD=-12V , VGS=-10V , RG=3.3Ω,

ID=-1A

---

3.5

---

ns

Ciss

Input Capacitance

---

620

---

Coss

Output Capacitance

---

69

---

Crss

Reverse Transfer Capacitance

VDS=-15V , VGS=0V , f=1MHz

---

52

---

pF

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

EAS

Single Pulse Avalanche Energy

5

VDD=-25V , L=0.1mH , IAS=-10A

9.4

---

mJ

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

1,6

---

-16

A

ISM

Pulsed Source Current

2,6

VG=VD=0V , Force Current

---

-32

A

VSD

Diode Forward Voltage

2

VGS=0V , IS=-1A , TJ=25℃

---

-1.2

V

Note :

1.The data tested by surface mounted on a 1 inch

2 FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-20.5A

4.The power dissipation is limited by 150℃ junction temperature

5.The Min. value is 100% EAS tested guarantee.

6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Guaranteed Avalanche Characteristics

Diode Characteristics

UD4301

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