2

TGA4807

May 2009 © Rev -

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

SYMBOL

PARAMETER 6/

VALUE

NOTES

Vd

POSITIVE SUPPLY VOLTAGE

Drain Voltage at RF output

7 V

Id

POSITIVE SUPPLY CURRENT

Drain Current

285 mA

1/

POWER DISSIPATION

2.2 W

2/

Vg

Ig

NEGATIVE GATE

Voltage

Gate Current

0 V to –3 V

5 mA

Vctrl

Ictrl

CONTROL GATE

Voltage

Gate Current

Vd/2 to –3 V

5 mA

3/

RF INPUT

Sinusoidal Continuous Wave Power

23 dBm

OPERATING CHANNEL TEMPERATURE

200 °C

4/ 5/

MOUNTING TEMPERATURE

(30 SECONDS)

320 °C

STORAGE TEMPERATURE

-65 to 150 °C

Notes:

1/ Assure the combination of Vd and Id does not exceed maximum power dissipation rating.

2/ When operated at this bias condition with a base plate temperature of 70 °C, the median life is 3.4E6 hours.

3/ Assure Vctrl never exceeds Vd during bias on and off sequences, and normal operation.

4/ These ratings apply to each individual FET.

5/ Junction operating temperature will directly affect the device median time to failure (Tm). For maximum

life, it is recommended that junction temperatures be maintained at the lowest possible levels.

6/ These ratings represent the maximum operable values for the device.

MAXIMUM RATINGS