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TGA4516 Datasheet(PDF) 4 Page - TriQuint Semiconductor |
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TGA4516 Datasheet(HTML) 4 Page - TriQuint Semiconductor |
4 / 9 page TGA4516 Parameter Test Conditions Tch ( oC) θθθθ JC ( oC/W) Tm (HRS) θθθθ JC Thermal Resistance (channel to backside of carrier) Vd = 6 V Id = 1700 mA Freq = 35 GHz Pdiss = 7.8 W 150 10.2 1E+6 TABLE III THERMAL INFORMATION Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70°C baseplate temperature. Worst case is at saturated output power when DC power consumption rises to 10.6 W with 2.3 W RF power delivered to load. Power dissipated is 8.2 W and the temperature rise in the channel is 84 °C. 1.E+12 1.E+13 Median Lifetime (Tm) vs. Channel Temperature 4 1.E+04 1.E+05 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 1.E+11 1.E+12 25 50 75 100 125 150 175 200 Channel Temperature ( C) FET5 ° TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2011 © Rev A |
Similar Part No. - TGA4516_15 |
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Similar Description - TGA4516_15 |
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