JANTXV2N6796 datasheet(1/6 Pages) IRF

Part #	JANTXV2N6796

Description	POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=8.0A)

Download	6 Pages

Scroll/Zoom	100%

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

Logo

1 / 6 page

Product Summary

Part Number

BVDSS

RDS(on)

ID

JANTX2N6796

JANTXV2N6796

Features:

s

Avalanche Energy Rating

s

Dynamic dv/dt Rating

s

Simple Drive Requirements

s

Ease of Paralleling

s

Hermetically Sealed

N-CHANNEL

Provisional Data Sheet No. PD-9.430B

100 Volt, 0.18

Ω

Ω HEXFET

HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transis-

tors. The efficient geometry achieves very low on-

state resistance combined with high transconductance.

HEXFET transistors also feature all of the well-es-

tablish advantages of MOSFETs, such as voltage

control, very fast switching, ease of paralleling and

electrical parameter temperature stability. They are

well-suited for applications such as switching power

supplies, motor controls, inverters, choppers, audio

amplifiers, and high energy pulse circuits, and virtu-

ally any application where high reliability is required.

JANTX2N6796

JANTXV2N6796

[REF:MIL-PRF-19500/557]

[GENERIC:IRFF130]

HEXFET® POWER MOSFET

Absolute Maximum Ratings

Parameter

JANTX2N6796, JANTXV2N6796

Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

8.0

ID @ VGS = 10V, TC = 100°C Continuous Drain Current

5.0

IDM

Pulsed Drain Current

32

PD @ TC = 25°C

Max. Power Dissipation

25

W

Linear Derating Factor

0.20

W/K

VGS

Gate-to-Source Voltage

±20

V

dv/dt

Peak Diode Recovery dv/dt

5.5

V/ns

TJ

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063 in. (1.6mm) from

case for 10.5 seconds)

Weight

0.98 (typical)

g

oC

A

8.0A

0.18

Ω

100V

Next Data Sheet

Index

Previous Datasheet

To Order

Similar Part No. - JANTXV2N6796

Manufacturer	Part #	Datasheet	Description
List of Unclassifed Man...	JANTXV2N6796	47Kb / 5P	100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor
Microsemi Corporation	JANTXV2N6796	1Mb / 9P	N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
Microsemi Corporation	JANTXV2N6796E3	1Mb / 9P	N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
International Rectifier	JANTXV2N6796U	201Kb / 7P	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)

More results

Similar Description - JANTXV2N6796

Manufacturer	Part #	Datasheet	Description
International Rectifier	JANTX2N6756	236Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14A)
	IRFY130CM	338Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14.4A)
	IRHN7130	508Kb / 14P	TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14)
	IRFY240CM	281Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=16A)
	IRFN240	223Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=18A)
	IRFN440	213Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.85ohm, Id=8.0A)
	JANTX2N6782	232Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.60ohm, Id=3.5A)
	IRFN150	217Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.060ohm, Id=34A)
	JANTX2N6788	238Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.30ohm, Id=6.0A)
	JANTX2N6764	254Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.055ohm, Id=38A)

More results

JANTXV2N6796 Datasheet(PDF) 1 Page - International Rectifier

JANTXV2N6796 Datasheet(HTML) 1 Page - International Rectifier

Similar Part No. - JANTXV2N6796

Similar Description - JANTXV2N6796

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL