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JANTXV2N6796 Datasheet(PDF) 1 Page - International Rectifier |
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1 / 6 page Product Summary Part Number BVDSS RDS(on) ID JANTX2N6796 JANTXV2N6796 Features: s Avalanche Energy Rating s Dynamic dv/dt Rating s Simple Drive Requirements s Ease of Paralleling s Hermetically Sealed N-CHANNEL Provisional Data Sheet No. PD-9.430B 100 Volt, 0.18 Ω Ω Ω Ω Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transis- tors. The efficient geometry achieves very low on- state resistance combined with high transconductance. HEXFET transistors also feature all of the well-es- tablish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits, and virtu- ally any application where high reliability is required. JANTX2N6796 JANTXV2N6796 [REF:MIL-PRF-19500/557] [GENERIC:IRFF130] HEXFET® POWER MOSFET Absolute Maximum Ratings Parameter JANTX2N6796, JANTXV2N6796 Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 8.0 ID @ VGS = 10V, TC = 100°C Continuous Drain Current 5.0 IDM Pulsed Drain Current 32 PD @ TC = 25°C Max. Power Dissipation 25 W Linear Derating Factor 0.20 W/K VGS Gate-to-Source Voltage ±20 V dv/dt Peak Diode Recovery dv/dt 5.5 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.063 in. (1.6mm) from case for 10.5 seconds) Weight 0.98 (typical) g oC A 8.0A 0.18 Ω 100V Next Data Sheet Index Previous Datasheet To Order |
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