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SUM1960NE Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # SUM1960NE
Description  N-Channel Enhancement Mode MOSFET
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SUM1960NE Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Any changes of specification will not be informed individually.
SUM1960NE
0.32A , 60V , RDS(ON) 2 Ω
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
4-Dec-2012 Rev. A
Page 1 of 2
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low RDS(on) and to
ensure minimal power loss and heat dissipation.
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life
Low thermal impedance copper leadframe SOT-363
saves board space
Fast switching speed
High performance trench technology
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-363
3K
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
1
TA=25°C
ID
0.32
A
TA=70°C
0.26
Pulsed Drain Current
2
IDM
0.7
A
Continuous Source Current (Diode Conduction)
1
IS
0.25
A
Power Dissipation
1
TA=25°C
PD
0.3
W
TA=70°C
0.21
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
°C
Thermal Resistance Rating
Maximum Junction to Ambient
1
t ≦ 5 sec
RθJA
415
°C / W
Steady State
460
Notes:
1.
Surface Mounted on 1” x 1” FR4 Board.
2.
Pulse width limited by maximum junction temperature.
ESD
Protection Diode
2KV
SOT-363
REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A
1.80
2.20
G
0.100 REF.
B
1.80
2.45
H
0.525 REF.
C
1.15
1.35
J
0.08
0.25
D
0.80
1.10
K
E
1.10
1.50
L
0.650 TYP.
F
0.10
0.35
B
L
F
H
C
J
D G
K
A
E


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