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SUM1960NE Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SUM1960NE Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SUM1960NE 0.32A , 60V , RDS(ON) 2 Ω Ω Ω Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 4-Dec-2012 Rev. A Page 1 of 2 RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-363 saves board space Fast switching speed High performance trench technology APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package MPQ Leader Size SOT-363 3K 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1 TA=25°C ID 0.32 A TA=70°C 0.26 Pulsed Drain Current 2 IDM 0.7 A Continuous Source Current (Diode Conduction) 1 IS 0.25 A Power Dissipation 1 TA=25°C PD 0.3 W TA=70°C 0.21 Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Rating Maximum Junction to Ambient 1 t ≦ 5 sec RθJA 415 °C / W Steady State 460 Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. ESD Protection Diode 2KV SOT-363 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.25 D 0.80 1.10 K 8° E 1.10 1.50 L 0.650 TYP. F 0.10 0.35 B L F H C J D G K A E |
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