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STT3524C Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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STT3524C Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Elektronische Bauelemente STT3524C N-Ch: 4.1 A, 20 V, RDS(ON) 47 mΩ Ω Ω Ω P-Ch: -3.2 A, -20 V, RDS(ON) 79 mΩ Ω Ω Ω N & P-Channel Enhancement Mode Mos.FET 23-Jan-2014 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(on) Provides Higher Efficiency And Extends Battery Life. Miniature TSOP-6 Surface Mount Package Saves Board Space. PACKAGE INFORMATION Package MPQ Leader Size TSOP-6 3K 7’ inch ABSOLUTE MAXIMUM RATINGS(TA=25℃ UNLESS OTHERWISE NOTED) Ratings Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±8 V TA=25°C 4.1 -3.2 Continuous Drain Current 1 TA=70°C ID 3.3 -2.6 A Pulsed Drain Current 2 IDM 8 -8 A Continuous Source Current (Diode Conduction) 1 IS 1.05 -1.05 A TA=25°C 1.15 Power Dissipation 1 TA=70°C PD 0.7 W Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 150 °C THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Typ. Max. Typ. Max. Unit t 10 sec ≦ 93 110 93 110 Maximum Junction to Ambient 1 Steady State RθJA 130 150 130 150 °C / W Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 2.70 3.10 G 0 0.10 B 2.60 3.00 H 0.60 REF. C 1.40 1.80 J 0.12 REF. D 1.10 MAX. K 0° 10° E 1.90 REF. L 0.95 REF. F 0.30 0.50 TSOP-6 B L F H C J D G K A E 1 2 3 4 5 6 Top View |
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