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TGA2623 Datasheet(PDF) 3 Page - TriQuint Semiconductor |
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TGA2623 Datasheet(HTML) 3 Page - TriQuint Semiconductor |
3 / 14 page TGA2623 10 – 11GHz 35W GaN Power Amplifier Preliminary Datasheet: Rev - 11-03-14 - 3 of 14 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance ( θJC) (1) Tbase = 85°C, Pulsed VD: PW = 100us, DC = 10% 1.14 ºC/W Channel Temperature (TCH) (Under RF drive) Tbase = 85°C, VD = 28V, ID_Drive = 3A, PIN =22dBm, POUT = 45.3dBm, PDISS = 51W 143 °C Median Lifetime (TM) 3.85 x 10^10 Hrs Thermal Resistance ( θJC) (1) Tbase = 85°C, CW 1.97 ºC/W Channel Temperature (TCH) (Under RF drive) Tbase = 85°C, VD = 28V, ID_Drive = 2.94A, PIN = 22dBm, POUT = 44.9dBm, PDISS = 52W 187 °C Median Lifetime (TM) 4.12 x 10^7 Hrs Notes: 1. Thermal resistance measured to back of carrier plate. MMIC mounted on 40 mils CuM0 (80/20) carrier using 1.5 mil AuSn. Median Lifetime Test Conditions: VD = 40 V; Failure Criteria = 10% reduction in ID_MAX 1E+04 1E+05 1E+06 1E+07 1E+08 1E+09 1E+10 1E+11 1E+12 1E+13 1E+14 1E+15 1E+16 1E+17 1E+18 25 50 75 100 125 150 175 200 225 250 275 Channel Temperature, TCH (C) Median Lifetime vs. Channel Temperature FET13 |
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Similar Description - TGA2623 |
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