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STT3490N Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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STT3490N Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 4 page STT3490N N-Channel Enhancement Mode Mos.FET 1.2 A, 150 V, RDS(ON) 700 m Elektronische Bauelemente 25-Aug-2010 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Gate-Threshold Voltage VGS(th) 1 - 3.5 V VDS=VGS, ID= 250uA Gate-Body Leakage IGSS - - ±100 uA VDS= 0V, VGS= ±20V Zero Gate Voltage Drain Current IDSS - - 1 uA VDS= 120V, VGS= 0V - - 10 VDS= 120V, VGS= 0V, TJ= 55°C On-State Drain Current a ID(on) 10 - - A VDS = 5V, VGS= 10V Drain-Source On-Resistance a RDS(ON) - - 700 mΩ VGS= 10V, ID= 1.2A - - 1200 VGS= 4.5V, ID= 1A Forward Transconductance a gfs - 11 - S VDS= 15V, ID= 1.2A Diode Forward Voltage a VSD - 0.8 - V IS= 1.25A, VGS= 0V DYNAMIC b Total Gate Charge Qg - 2.5 - nC VDS= 10V, VGS= 4.5V, ID= 1A Gate-Source Charge Qgs - 1 - Gate-Drain Charge Qgd - 0.8 - Turn-on Delay Time Td(on) - 5 - nS VDD= 10V, VGEN= 10V, RL= 10, ID= 1A, RGEN= 6 Rise Time Tr - 5 - Turn-off Delay Time Td(off) - 6 - Fall Time Tf - 4 - Input Capacitance Ciss - 320 - pF VDS= 15V, VGS= 0V, f= 1MHz Output Capacitance Coss - 37 - Reverse Transfer Capacitance Crss - 20 - Notes a. Pulse test:PW ≦ 300 us duty cycle ≦ 2%. b. Guaranteed by design, not subject to production testing. |
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