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STT3471P Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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STT3471P Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page STT3471P -2A, -100V, RDS(ON) 350 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente 08-Apr-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TSOP-6 saves board space. Fast switching speed. High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package MPQ Leader Size TSOP-6 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1 TA= 25°C ID 2.0 A TA= 70°C 1.6 Pulsed Drain Current 2 IDM -8 A Continuous Source Current (Diode Conduction) 1 IS -2.1 A Power Dissipation 1 TA= 25°C PD 2.0 W TA= 70°C 1.3 Operating Junction and Storage Temperature Range Tj, Tstg -55~150 °C Thermal Resistance Rating Maximum Junction to Ambient 1 t ≦ 5 sec RJA 62.5 °C / W 110 Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0 0.10 B 2.60 3.00 H 0.60 REF. C 1.40 1.80 J 0.12 REF. D1.10 MAX. K 0° 10° E 1.90 REF. L 0.95 REF. F 0.30 0.50 TSOP-6 B L F H C J D G K A E 1 23 4 5 6 D G DD D S |
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