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TGA2611 Datasheet(PDF) 8 Page - TriQuint Semiconductor |
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TGA2611 Datasheet(HTML) 8 Page - TriQuint Semiconductor |
8 / 12 page TGA2611 2-6 GHz GaN LNA Preliminary Datasheet: Rev - 01-29-15 - 8 of 12 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Application Circuit Bias-up Procedure 1. Set ID limit to 175mA, IG limit to 1mA 2. Apply -5V to VG for pinch off 3. Apply +10V to VD 4. Adjust VG more positive until IDQ = 110mA (VG ~ -2.3 V Typical) 5. Apply RF signal Bias-down Procedure 1. Turn off RF signal 2. Reduce VG to -5V. Ensure IDQ ~ 0mA 3. Set VD to 0V 4. Turn off VD supply 5. Turn off VG supply VD = 10 V, IDQ = 110 mA C10 0.01 uF VG = -2.3 V Typical R8 4 Ohm C12 0.01 uF C8 1 uF J1 RF In J2 RF Out 1 2 4 3 |
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Similar Description - TGA2611 |
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