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STT3458N Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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STT3458N Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 4 page Elektronische Bauelemente STT3458N 3.4A , 60V , RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET 14-Mar-2012 Rev. C Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Gate-Threshold Voltage VGS(th) 1 - - V VDS=VGS, ID=250μA Gate-Body Leakage IGSS - - ±100 nA VDS=0, VGS= ±20V - - 1 VDS=48V, VGS=0 Zero Gate Voltage Drain Current IDSS - - 25 μA VDS=48V, VGS=0, TJ= 55°C On-State Drain Current 1 ID(on) 10 - - A VDS =5V, VGS=10V - - 92 VGS=10V, ID=2.7A Drain-Source On-Resistance 1 RDS(ON) - - 107 mΩ VGS=4.5V, ID=2.5A Forward Transconductance 1 gfs - 8 - S VDS=15V, ID=2.7A Diode Forward Voltage VSD - 0.81 - V IS=1.3A, VGS=0 Dynamic 2 Input Capacitance Ciss - 297 - Output Capacitance Coss - 40 - Reverse Transfer Capacitance Crss - 28 - pF VDS=15V, VGS=0, f=1MHz Total Gate Charge Qg - 4 - Gate-Source Charge Qgs - 1.2 - Gate-Drain Charge Qgd - 2.1 - nC VDS=30V, VGS=4.5V, ID=2.7A Turn-on Delay Time Td(on) - 4 - Rise Time Tr - 6 - Turn-off Delay Time Td(off) - 17 - Fall Time Tf - 5 - nS VDS=30V, VGEN=10V, RL=11.2Ω, ID=2.7A, RGEN=6Ω Notes 1. Pulse test:PW≦300μs duty cycle≦2%. 2. Guaranteed by design, not subject to production testing. |
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