Product Summary

Part Number

IRHNA9160

-100V

0.087

Ω

-38A

Features:

s

s

Single Event Burnout (SEB) Hardened

s

Single Event Gate Rupture (SEGR) Hardened

s

Gamma Dot (Flash X-Ray) Hardened

s

Neutron Tolerant

s

Identical Pre- and Post-ElectricalTest Conditions

s

Repetitive Avalanche Rating

s

Dynamic dv/dt Rating

s

Simple Drive Requirements

s

Ease of Paralleling

s

Hermetically Sealed

s

Surface Mount

s

Lightweight

Absolute Maximum Ratings

Parameter

IRHNA9160

Units

ID @ VGS = -12V, TC = 25

Continuous Drain Current

-38

ID @ VGS = -12V, TC = 100

-24

IDM

-152

PD @ TC = 25

Max. Power Dissipation

300

W

Linear Derating Factor

2.4

VGS

Gate-to-SourceVoltage

±20

V

EAS

500

mJ

IAR

-38

A

EAR

Repetitive Avalanche Energy Œ

30

mJ

dv/dt

-5.5

V/ns

TJ

Operating Junction

-55 to 150

TSTG

StorageTemperature Range

Package Mounting Surface Temperature

300 (for 5 sec.)

Weight

3.3 (typical)

g

P-CHANNEL

RAD HARD

Provisional Data Sheet No. PD-9.1433

Pre-Radiation

-100Volt, 0.087

Ω

Ω

Ω

Ω

Ω, RAD HARD HEXFET

International Rectifier’s P-Channel RAD HARD technology

HEXFETs demonstrate excellent threshold voltage stability

and breakdown voltage stability at total radiation doses as

test conditions, International Rectifier’s P-Channel RAD

HARD HEXFETs retain identical electrical specifications

drive circuitry is required. These devices are also capable of

(Si)/Sec, and return to normal operation within a few micro-

seconds. Single Event Effect (SEE) testing of International

Rectifier’s P-Channel RAD HARD HEXFETs has demon-

strated virtual immunity to SEE failure. Since the RAD HARD

process utilizes International Rectifier’s patented HEXFET

technology, the user can expect the highest quality and reli-

ability in the industry.

P- Channel RAD HARD HEXFET transistors also feature all

of the well-established advantages of MOSFETs, such as

voltage control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters. They are

well-suited for applications such as switching power sup-

plies, motor controls, inverters, choppers, audio amplifiers

and high-energy pulse circuits in space and weapons envi-

ronments.

A

IRHNA9160

REPETITIVE AVALANCHE AND dv/dt RATED

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