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TGA2237-SM Datasheet(PDF) 1 Page - TriQuint Semiconductor |
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TGA2237-SM Datasheet(HTML) 1 Page - TriQuint Semiconductor |
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1 / 18 page  TGA2237-SM 0.03 – 2.5GHz 10W GaN Power Amplifier Preliminary Datasheet: Rev - 06-03-14 - 1 of 18 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com QFN 5x5 mm 32L Pad Configuration Pad No. Symbol 1-2, 4, 6, 8-9, 16-17,19, 21, 23-25, 32 GND 3, 7, 10-15, 18, 22, 27-31 NC 5 RF IN 20 RF OUT, DRAIN 26 GATE Applications Commercial and military radar Communications Electronic Warfare General Description TriQuint’s TGA2237-SM is a wideband distributed amplifier fabricated on TriQuint ’s production 0.25um GaN on SiC process. The TGA2237-SM operates from 0.03 – 2.5GHz and provides greater than 10W of saturated output power with greater than 13dB of large signal gain and greater than 50% power-added efficiency. The TGA2237-SM is available in a low-cost, surface mount 32 lead 5x5 AIN QFN. It is ideally suited to support both radar and communication applications across defense and commercial markets as well as electronic warfare. The TGA2237-SM is fully matched to 50Ω at both RF ports allowing for simple system integration. DC blocks are required on both RF ports and the drain voltage must be injected through an off chip bias-tee on the RF output port. Lead-free and RoHS compliant. Evaluation boards are available upon request. Ordering Information Part ECCN Description TGA2237-SM EAR99 0.03 – 2.5GHz 10W GaN Power Amplifier Product Features Frequency Range: 0.03 – 2.5GHz P SAT: >40dBm at PIN = 27dBm P1dB: >33dBm PAE: >50% Large Signal Gain: >13dB Small Signal Gain: >19dB Input Return Loss: >10dB Output Return Loss: >12dB Bias: V D = 32V, IDQ = 360mA, VG = -2.6V Typical Wideband Flat Power Package Dimensions: 5.0 x 5.0 x 1.45 mm Functional Block Diagram 9 10 11 12 13 14 15 16 1 2 3 4 5 6 7 8 24 23 22 21 20 19 18 17 32 31 30 29 28 27 26 25 RF IN RF OUT |
Similar Part No. - TGA2237-SM_15 |
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Similar Description - TGA2237-SM_15 |
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