TriQuint Semiconductor Texas: (972)994 8465

Fax (972)994 8504 Web: www.triquint.com

Product Data Sheet

4

December 13, 2001

TABLE V

THERMAL INFORMATION*

Parameter

Test Conditions

(

(

°C/W)

(HRS)

(channel to backside of

carrier)

Vd = 7V

Pdiss = 3.5 W

125.03

15.79

9.5 E+6

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier

at 70

°C baseplate temperature. Worst case condition with no RF applied, 100% of DC

power is dissipated.

*

This information is a result of a thermal model analysis.

TABLE IV

RF WAFER CHARACTERIZATION TEST

°C + 5°C)

(Vd = 7V, Id = 500 mA

±5%)

Parameter

Unit

Min

Typical

Max

Frequency

GHz

36

40

Output P1dB

dBm

26

29

Small Signal Gain

dB

12

14

Input Return Loss

dB

-15

Output Return Loss

dB

-15

Output TOI

dBm

36

TGA1171-SCC