HAT2184WP_15 datasheet(4/9 Pages) RENESAS

Part #	HAT2184WP

Description	Silicon N Channel Power MOS FET Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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4 / 9 page

HAT2184WP

Rev.5.00 Nov 27 2006 page 2 of 6

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown voltage

V(BR)DSS

150

—

V

ID = 10 mA, VGS = 0

Zero gate voltage drain current

IDSS

—

1

µA

VDS = 150 V, VGS = 0

Gate to source leak current

IGSS

—

±0.1

µA

VGS =

±30 V, VDS = 0

Gate to source cutoff voltage

VGS(off)

3.0

—

4.5

V

VDS = 10 V, ID = 1 mA

Forward transfer admittance

|yfs|

6

10

—

S

ID = 7 A, VDS = 10 V

Note4

Static drain to source on state

resistance

RDS(on)

—

0.097

0.11

Ω

ID = 7 A, VGS = 10 V

Note4

Input capacitance

Ciss

—

710

—

pF

Output capacitance

Coss

—

160

—

pF

Reverse transfer capacitance

Crss

—

13

—

pF

VDS = 25 V

VGS = 0

f = 1 MHz

Turn-on delay time

td(on)

—

26

—

ns

Rise time

tr

—

31

—

ns

Turn-off delay time

td(off)

—

53

—

ns

Fall time

tf

—

7

—

ns

ID = 7 A

VGS = 10 V

RL = 10.7

Ω

Rg = 10

Ω

Total gate charge

Qg

—

15

—

nC

Gate to source charge

Qgs

—

4.3

—

nC

Gate to drain charge

Qgd

—

5.6

—

nC

VDD = 120 V

VGS = 10 V

ID = 14 A

Body-drain diode forward voltage

VDF

—

0.85

1.4

V

IF = 14 A, VGS = 0

Note4

Body-drain diode reverse recovery time

trr

—

95

—

ns

IF = 14 A, VGS = 0

diF/dt = 100 A/

µs

Notes: 4. Pulse test

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