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SSG4890N Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4890N Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 4 page Elektronische Bauelemente SSG4890N 1.4 A, 150 V, RDS(ON) 700 m Dual-N Enhancement Mode Power MOSFET 24-Aug-2012 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. PACKAGE INFORMATION Package MPQ Leader Size SOP-8 2.5K 13’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ±20 V TA = 25°C 1.4 Continuous Drain Current 1 TA = 70°C ID 1.1 A Pulsed Drain Current 2 IDM 10 A Continuous Source Current (Diode Conduction) 1 IS 2.6 A TA = 25°C 2.1 Power Dissipation 1 TA = 70°C PD 1.3 W Operating Junction & Storage Temperature Range TJ, TSTG -55 ~ 150 °C THERMAL RESISTANCE RATINGS t ≦ 10 sec 62.5 °C / W Maximum Junction to Ambient 1 Steady State RθJA 110 °C / W Notes 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. SOP-8 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45° D 0° 8° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. G S G S D D D D |
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