SSG4512CE_15 datasheet(2/7 Pages) SECOS

Part #	SSG4512CE

Description	N & P-Ch Enhancement Mode Power MOSFET

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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SSG4512CE

N & P-Ch Enhancement Mode Power MOSFET

N-Ch: 6.9 A, 30 V, RDS(ON) 31 mΩ

Ω

P-Ch: -5.2 A, -30 V, RDS(ON) 52 mΩ

Ω

Elektronische Bauelemente

26-Dec-2011 Rev. A

Page 2 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

N-CHANNEL ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

Gate Threshold Voltage

VGS(th)

1

-

V

VDS=VGS, ID=250µA

Gate-Source Leakage Current

IGSS

-

±100

nA

VGS= 8V, VDS=0

Drain-Source Leakage Current

IDSS

-

1

µA

VDS=24V, VGS=0

On-State Drain Current

1

ID(ON)

20

-

A

VDS=5V, VGS=10V

Static Drain-Source On-Resistance

1

RDS(ON)

-

31

m

VGS=10V, ID=6.9A

-

40

VGS=4.5V, ID=6A

Forward Transconductance

1

gfs

-

25

-

S

VDS=15V, ID=6.9A

Dynamic

Total Gate Charge

Qg

-

4.0

nC

ID=6.9A

VDS=15V

VGS=10V

Gate-Source Charge

Qgs

-

1.1

-

Gate-Drain (“Miller”) Change

Qgd

-

1.4

-

Turn-on Delay Time

Td(on)

-

8

-

nS

VDD=15V

VGS=10V

ID=1A

RGEN=6

Rise Time

Tr

-

5

-

Turn-off Delay Time

Td(off)

-

23

-

Fall Time

Tf

-

3

-

Notes:

1. Pulse test: PW ≦ 300us duty cycle ≦ 2%.

2. Guaranteed by design, not subject to production testing.

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