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T2G6003028-FL Datasheet(PDF) 8 Page - TriQuint Semiconductor |
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T2G6003028-FL Datasheet(HTML) 8 Page - TriQuint Semiconductor |
8 / 13 page T2G6003028-FL 30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev A 12-03-13 - 8 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Evaluation Board Performance (1, 2) Performance at 3 dB Compression Notes: 1. Test Conditions: VDS = 28 V, IDQ = 200 mA 2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20 % Application Circuit Bias-up Procedure Set gate voltage (VG) to -5.0V Set drain voltage (VD) to 28 V Slowly increase VG until quiescent ID is 200 mA. Apply RF signal Bias-down Procedure Turn off RF signal Turn off VD and wait 1 second to allow drain capacitor dissipation Turn off VG |
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