T2G4003532-FL

30W, 32V DC – 3.5 GHz, GaN RF Power Transistor

Datasheet: Rev - 12-30-13

- 2 of 13 -

Disclaimer: Subject to change without notice

© 2013 TriQuint

www.triquint.com

Absolute Maximum Ratings

Parameter

Value

100 V

-7 to 0 V

4.5 A

-7.5 to 12 mA

40 W

RF Input Power, CW,

38.75 dBm

275 °C

Mounting Temperature

(30 Seconds)

320 °C

Storage Temperature

-40 to 150 °C

Operation of this device outside the parameter ranges

given above may cause permanent damage. These are

stress ratings only, and functional operation of the device

at these conditions is not implied.

Recommended Operating Conditions

Parameter

Value

32 V (Typ.)

150 mA (Typ.)

1900 mA (Typ.)

-2.9 V (Typ.)

225 °C (Max)

28 W (Max)

46 W (Max)

Electrical specifications are measured at specified test conditions.

Specifications are not guaranteed over all recommended

operating conditions.

RF Characterization – Load Pull Performance at 3.5 GHz

(1)

Symbol Parameter

Min

Typical

Max

Units

Linear Gain

17.7

dB

Output Power at 3 dB Gain Compression

31.0

W

Drain Efficiency at 3 dB Gain Compression

59.7

%

Power-Added Efficiency at 3 dB Gain

Compression

57.6

%

Gain at 3 dB Compression

14.7

dB

Notes:

RF Characterization – Load Pull Performance at 1.0 GHz

(1)

Symbol Parameter

Min

Typical

Max

Units

Linear Gain

21.6

dB

Output Power at 3 dB Gain Compression

27.0

W

Drain Efficiency at 3 dB Gain Compression

51.0

%

Power-Added Efficiency at 3 dB Gain

Compression

50.0

%

Gain at 3 dB Compression

18.6

dB

Notes: