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T1G2028536-FL Datasheet(PDF) 4 Page - TriQuint Semiconductor |
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T1G2028536-FL Datasheet(HTML) 4 Page - TriQuint Semiconductor |
4 / 13 page T1G2028536-FL 285W, 36V DC – 2 GHz, GaN RF Power Transistor Datasheet: Rev A 10-17-13 - 4 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θJC) DC at 85 °C Case 0.73 °C/W Channel Temperature (TCH) 250 °C Notes: Thermal resistance measured to bottom of package Median Lifetime Maximum Channel Temperature TBASE = 85°C, PD = 288 W 140.0 160.0 180.0 200.0 220.0 240.0 260.0 280.0 300.0 320.0 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 Pulse Width (sec) Max. Channel Temperature vs. Pulse Width 5% Duty Cycle 10% Duty Cycle 20% Duty Cycle 50% Duty Cycle |
Similar Part No. - T1G2028536-FL_15 |
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Similar Description - T1G2028536-FL_15 |
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