Specifications and information are subject to change without notice

TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com

Page 2 of 5 August 2011

ECG001B

InGaP HBT Gain Block

Typical Device RF Performance

Ω

Ω

Frequency

MHz

100

500

900

1900

2140

2400

3500

5800

S21

dB

22.8

22.6

22.4

21.4

21.0

20.7

19.2

16.1

S11

dB

-48

-46

-42

-35

-29

-28

-22

-14

S22

dB

-34

-29

-24

-18

-17

-16

-13

-8

Output P1dB

dBm

+11.6

+11.6

+12.6

+12.6

+12.6

+12.8

+12.2

+11

Output IP3

dBm

+23.6

+23.5

+24.8

+26

+25.6

+25.4

+23

Noise Figure

dB

3.4

3.4

3.4

3.4

3.4

3.4

1. Test conditions: T = 25º C, Supply Voltage = +5 V, Device Voltage = +3.4 V, Rbias = 51 Ω, Icc = 30 mA typical, 50 Ω System.

2. 3OIP measured with two tones at an output power of -1 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.

3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.

Gain

14

16

18

20

22

24

0

1

2

3

4

5

6

Frequency (GHz)

Return Loss

-40

-30

-20

-10

0

0

1

2

3

4

5

6

Frequency (GHz)

S11

S22

Icc vs. Vde

0

20

40

60

80

100

3.2

3.3

3.4

3.5

3.6

Vde (V)

OIP3 vs. Frequency

20

22

24

26

28

500

1000

1500

2000

2500

3000

Frequency (MHz)

+25C

-40C

+85C

Noise Figure vs. Frequency

0

1

2

3

4

5

500

1000

1500

2000

2500

3000

Frequency (MHz)

P1dBvs. Frequency

6

8

10

12

14

16

18

500

1000

1500

2000

2500

3000

Frequency (MHz)

+25C

-40C

+85C