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AH125-89G Datasheet(PDF) 10 Page - TriQuint Semiconductor

Part # AH125-89G
Description  W High Linearity InGaP HBT Amplifier
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Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

AH125-89G Datasheet(HTML) 10 Page - TriQuint Semiconductor

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AH125
½
W High Linearity InGaP HBT Amplifier
Datasheet: Rev B 05-02-13
- 10 of 14 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Typical Performance 2500-2700 MHz
Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25°C, tuned application circuit
Frequency
Conditions
2500
2600
2700
MHz
Gain
13.9
14.0
13.7
dB
Input Return Loss
9.5
13.1
12.9
dB
Output Return Loss
9.4
8.7
8.2
dB
EVM
Pout = +19 dBm
1.5
1.25
1.3
%
Output P1dB
+28
+28
+28
dBm
Output IP3
Pout=+16 dBm/tone, Δf=1 MHz
+49
+48
+47
dBm
Notes:
1. 802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 sub-channels, 5 MHz Carrier BW.
2500-2700 MHz Application Circuit
C1
R1
R2
C2
C3
C8
C4
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 Ω jumpers can be replaced with copper trace in target application.
4. Distance from side edge of C10 to side edge of U1 pin 1 is 55 mils (7.9° at 2600
MHz).
5. Distance from end edge of R1 to side edge of U1 pin 1 is 110 mils (15.8° at 2600
MHz).
6. Distance from side edge of C9 to side edge of U1 pin 3 is 90 mils (13.0° at 2600
MHz).
J1
J2
C1
RF Input
RF Output
R1
R2
R1
Z= 50 Ohm
L=55 mils
Z= 50 Ohm
L=55 mils
1pF
0 Ohms 22pF
0 Ohms
C10
0.8pF
C9
0.6pF
U1
AH125-89PCB2600
1
2
3
Z= 50 Ohm
L=90 mils
R4
VCC
L1
0 Ohms
C8
1uF
C4
1000pF
18nH
0805CS
C3
22pF


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