AH118

¼ Watt, High Linearity InGaP HBT Amplifier

Data Sheet: Rev B 02/14/12

- 4 of 14 -

Disclaimer: Subject to change without notice

© 2012 TriQuint Semiconductor, Inc.

Reference Design 920-960 MHz (AH118-89PCB900)

C4

L2

R2

L3

C5

D1

C1

C3

C2

U1

Notes:

1. The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically

required in the final circuit layout in a system using a DC regulator.

2. L2 - the 0 Ω resistor - can be removed (with a thru line) in the final circuit layout.

3. The distance from U1 pin1 pad to the edge of C7 is 120 mil.

4. The distance from U1 pin3 pad to the edge of C9 is 350 mil.

Bill of Material

Ref Des

Value

Description

Manufacturer

Part Number

U1

High Linearity Amplifier

TriQuint

AH118-89G

C1

0.1 μF

Cap, Chip, 1206, 50 V, 10%, X7R

various

C2, C4, C5

56 pF

Cap, Chip, 0603, 50 V, 5%, NPO/COG

various

C3

1000 pF

Cap, Chip, 0805, 50 V, 5%, NPO

various

C7

6.8 pF

Cap, Chip, 0603, 200 V, NPO/COG

various

C9

2.0 pF

Cap, Chip, 0603, 200 V, NPO/COG

various

L1

33 nH

Ind, Chip, 0603, 5%, Ceramic Core

various

L2

0 Ω

Res, Chip, 0603, 5%, 1/16 W

various

L3

2.2 nH

Ind, Chip, 0603, ±0.3 nH, Multilayer

various

R2

0.51 Ω

Res, Chip, 0603, 5%, 1/10 W

various

R1

No Load Part

D1

Zener Diode, SOD-123

ID=C4

C=56 pF

ID=C5

C=56 pF

ID=C9

C=2 pF

DIODE1

ID=C2

C=56 pF

ID=C3

C=1000 pF

ID=C1

C=100000 pF

ID=C7

C=6.8 pF

IND

ID=L1

L=33 nH

ID=L2

R=0 Ohm

ID=L3

L=2.2 nH

NET="AH118"

Vcc = +5 V

5.6 V

ID=R2

R=0.5 Ohm