C-63

Revision 0

IRGBC40F

Fast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Parameter

Min.

Typ.

Max.

Units

Junction-to-Case

—

—

0.77

Case-to-Sink, flat, greased surface

—

0.50

—

°C/W

Junction-to-Ambient, typical socket mount

—

—

80

Wt

Weight

—

2.0 (0.07)

—

g (oz)

Features

• Switching-loss rating includes all "tail" losses

• Optimized for medium operating frequency ( 1 to

10kHz) See Fig. 1 for Current vs. Frequency curve

E

C

G

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have

higher usable current densities than comparable bipolar transistors, while at

the same time having simpler gate-drive requirements of the familiar power

MOSFET. They provide substantial benefits to a host of high-voltage, high-

current applications.

Absolute Maximum Ratings

Parameter

Max.

Units

Collector-to-Emitter Voltage

600

V

Continuous Collector Current

49

Continuous Collector Current

27

A

Pulsed Collector Current

200

Clamped Inductive Load Current

200

Gate-to-Emitter Voltage

±20

V

Reverse Voltage Avalanche Energy

15

mJ

Maximum Power Dissipation

160

W

Maximum Power Dissipation

65

Operating Junction and

-55 to +150

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

Thermal Resistance

PD - 9.691A

TO-220AB

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