IRGBC20SD2

Fig. 5 - Collector-to-Emitter Voltage vs.

Junction Temperature

Fig. 4 - Maximum Collector Current vs.

Case Temperature

Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

1.0

1.5

2.0

2.5

- 6 0

- 4 0

- 2 0

0

2 0

4 0

6 0

8 0

100

120

140

160

V

= 15V

80µs PULSE WIDTH

GE

A

I

= 40A

I

= 20A

I

= 10A

T , Junction Temperature (°C)

J

C

C

C

0

10

20

30

40

25

50

75

100

125

150

T

, Case Temperature (°C)

C

V

= 15V

GE

A

0.01

0.1

1

0.0000 1

0.0001

0.001

0.0 1

0.1

1

1 0

t

, R e ct an gu la r P ulse D u ra tion (s ec )

1

D = 0.50

0.01

0.02

0.05

0.10

0.20

S ING LE PULS E

(T HERMA L RE SPO NS E)

P

t 2

1

t

DM

N otes :

1 . D uty fac tor D = t

/ t

2 . P ea k T = P

x Z

+ T

12

J

DM

thJ C

C

To Order

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