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IRGBC20K Datasheet(PDF) 1 Page - International Rectifier |
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IRGBC20K Datasheet(HTML) 1 Page - International Rectifier |
1 / 6 page C-837 IRGBC20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Parameter Min. Typ. Max. Units RθJC Junction-to-Case — — 2.1 RθCS Case-to-Sink, flat, greased surface — 0.50 — °C/W RθJA Junction-to-Ambient, typical socket mount — — 80 Wt Weight — 2 (0.07) — g (oz) Features • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.5V @VGE = 15V, IC = 6.0A E C G n-channel Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 10 IC @ TC = 100°C Continuous Collector Current 6.0 A ICM Pulsed Collector Current 20 ILM Clamped Inductive Load Current 20 tsc Short Circuit Withstand Time 10 µs VGE Gate-to-Emitter Voltage ±20 V EARV Reverse Voltage Avalanche Energy 5.0 mJ PD @ TC = 25°C Maximum Power Dissipation 60 W PD @ TC = 100°C Maximum Power Dissipation 24 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m) PD - 9.1128 Thermal Resistance Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high- current applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. Description TO-220AB Revision 1 Next Data Sheet Index Previous Datasheet To Order |
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