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RJH60F6BDPQ-A0 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJH60F6BDPQ-A0 Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 9 page RJH60F6BDPQ-A0 Preliminary R07DS0632EJ0100 Rev.1.00 Page 4 of 8 Feb 17, 2012 1 10 100 1000 10000 0100 50150 200 250 300 Gate Charge Qg (nc) Dynamic Input Characteristics (Typical) Typical Capacitance vs. Collector to Emitter Voltage 800 600 400 200 0 0 16 12 8 4 0 40 80120 160 IC = 25 A Ta = 25°C VGE VCE VCC = 600 V 300 V VCC = 600 V 300 V Collector to Emitter Voltage VCE (V) Cies Coes Cres VGE = 0 V f = 1 MHz Ta = 25°C C-E Diode Forward Voltage VCEF (V) Forward Current vs. Forward Voltage (Typical) 0 20 40 60 80 100 0123 4 5 VGE = 0 V Ta = 25°C Pulse Test |
Similar Part No. - RJH60F6BDPQ-A0_15 |
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