IRG4RC10U datasheet(1/8 Pages) IRF

Part #	IRG4RC10U

Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)

Download	8 Pages

Scroll/Zoom	100%

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

Logo

1 / 8 page

Parameter

Max.

Units

VCES

Collector-to-Emitter Voltage

600

V

IC @ TC = 25°C

Continuous Collector Current

8.5

IC @ TC = 100°C

Continuous Collector Current

5.0

A

ICM

Pulsed Collector Current

34

ILM

Clamped Inductive Load Current

34

VGE

Gate-to-Emitter Voltage

±20

V

EARV

Reverse Voltage Avalanche Energy

110

mJ

PD @ TC = 25°C

Maximum Power Dissipation

38

PD @ TC = 100°C

Maximum Power Dissipation

15

TJ

Operating Junction and

-55 to +150

TSTG

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case )

IRG4RC10U

UltraFast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

PD - 91572A

E

C

G

n-channel

Features

• UltraFast: Optimized for high operating

frequencies ( 8-40 kHz in hard switching, >200

kHz in resonant mode)

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

previous generation

• Industry standard TO-252AA package

• Generation 4 IGBT's offer highest efficiency available

• IGBT's optimized for specified application conditions

Benefits

VCES = 600V

VCE(on) typ.

= 2.15V

@VGE = 15V, IC = 5.0A

8/30/99

Absolute Maximum Ratings

W

°C/W

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

3.3

RθJA

Junction-to-Ambient (PCB mount)*

–––

50

Wt

Weight

0.3 (0.01)

–––

g (oz)

Thermal Resistance

* When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994

D-PAK

TO-252AA

www.irf.com

1

Similar Part No. - IRG4RC10U

Manufacturer	Part #	Datasheet	Description
International Rectifier	IRG4RC10UD	191Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
	IRG4RC10UDPBF	308Kb / 11P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
	IRG4RC10UDPBF	308Kb / 11P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
	IRG4RC10UDPBF	308Kb / 11P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
	IRG4RC10UPBF	654Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR

More results

Similar Description - IRG4RC10U

Manufacturer	Part #	Datasheet	Description
International Rectifier	IRG4RC10K	134Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
	IRG4BC10UD	184Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
	IRG4RC10UD	191Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
	IRG4PH20K	229Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A)
	IRG4BC20U	167Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
	IRG4BC40U	169Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
	IRG4PC40U	148Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)
	IRG4PC50F	146Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
	IRG4PC30F	145Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
	IRG4PC40W	116Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)

More results

IRG4RC10U Datasheet(PDF) 1 Page - International Rectifier

IRG4RC10U Datasheet(HTML) 1 Page - International Rectifier

Similar Part No. - IRG4RC10U

Similar Description - IRG4RC10U

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL