Elektronische Bauelemente

SSF318W

N-Ch Enhancement Mode Power MOSFET

07-Feb-2014 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

50

-

-

V

Gate-Threshold Voltage

0.5

-

1.5

V

Gate-Body Leakage Current

-

-

±100

nA

-

-

0.1

Drain-Source Leakage Current

-

-

0.5

µA

-

5.6

10

Drain-Source On-Resistance

1

-

-

3.5

Forward Transconductance

100

-

-

mS

Switch

2

Turn-on Delay Time

1

-

20

-

Turn-off Delay Time

-

20

-

nS

Dynamic

Input Capacitance

-

40

-

Output Capacitance

-

12

-

Reverse Transfer Capacitance

-

3.5

-

pF

f=1.0MHz

Notes:

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.