Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

IRG4RC10 Datasheet(PDF) 3 Page - International Rectifier

Part # IRG4RC10
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG4RC10 Datasheet(HTML) 3 Page - International Rectifier

  IRG4RC10 Datasheet HTML 1Page - International Rectifier IRG4RC10 Datasheet HTML 2Page - International Rectifier IRG4RC10 Datasheet HTML 3Page - International Rectifier IRG4RC10 Datasheet HTML 4Page - International Rectifier IRG4RC10 Datasheet HTML 5Page - International Rectifier IRG4RC10 Datasheet HTML 6Page - International Rectifier IRG4RC10 Datasheet HTML 7Page - International Rectifier IRG4RC10 Datasheet HTML 8Page - International Rectifier IRG4RC10 Datasheet HTML 9Page - International Rectifier Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 10 page
background image
IRG4RC10KD
www.irf.com
3
0.1
1
10
100
0.0
0.4
0.8
1.2
1.6
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
For both:
D uty cy cle: 50%
T = 12 5 °C
T
= 90 °C
G a te drive as specifie d
sin k
J
P ow e r Dis sip ation =
W
6 0% of rate d
volta ge
I
Ideal diodes
S qua re w a v e :
1.4
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
1
10
100
1.0
2.0
3.0
4.0
5.0
6.0
7.0
V
, Collector-to-Emitter Voltage (V)
CE

V
= 15V
20µs PULSE WIDTH
GE

T = 25 C
J
°

T = 150 C
J
°
1
10
100
5
10
15
20
V
, Gate-to-Emitter Voltage (V)
GE

V
= 50V
5µs PULSE WIDTH
CC

T = 25 C
J
°

T = 150 C
J
°
55


Similar Part No. - IRG4RC10

ManufacturerPart #DatasheetDescription
logo
International Rectifier
IRG4RC10 IRF-IRG4RC10 Datasheet
134Kb / 8P
   INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
IRG4RC10 IRF-IRG4RC10 Datasheet
120Kb / 8P
   INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A)
IRG4RC10K IRF-IRG4RC10K Datasheet
134Kb / 8P
   INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
IRG4RC10KDPBF IRF-IRG4RC10KDPBF Datasheet
326Kb / 12P
   INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4RC10KPBF IRF-IRG4RC10KPBF Datasheet
188Kb / 10P
   INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
More results

Similar Description - IRG4RC10

ManufacturerPart #DatasheetDescription
logo
International Rectifier
IRG4BC10KD IRF-IRG4BC10KD Datasheet
210Kb / 10P
   INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A)
IRG4RC10K IRF-IRG4RC10K Datasheet
134Kb / 8P
   INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
IRG4BC10UD IRF-IRG4BC10UD Datasheet
184Kb / 10P
   INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
IRG4RC10UD IRF-IRG4RC10UD Datasheet
191Kb / 10P
   INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
IRG4PH20KD IRF-IRG4PH20KD Datasheet
276Kb / 10P
   INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A)
IRG4RC10U IRF-IRG4RC10U Datasheet
131Kb / 8P
   INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
IRG4BC15UD-S IRF-IRG4BC15UD-S Datasheet
210Kb / 12P
   INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A)
IRG4BC20FD-S IRF-IRG4BC20FD-S Datasheet
222Kb / 10P
   INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)
IRG4BC20UDS IRF-IRG4BC20UDS Datasheet
235Kb / 11P
   INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
IRG4BC30UD IRF-IRG4BC30UD Datasheet
234Kb / 10P
   INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com