IRG4BC30UD

4

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Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

Fig. 4 - Maximum Collector Current vs.

Case Temperature

Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

0

5

10

15

20

25

25

50

75

100

125

150

T

, C a s e T e m perature (°C)

C

V

= 1 5 V

GE

A

0.01

0.1

1

10

0.00001

0.0001

0.001

0.01

0.1

1

10

t , R ectangular Pulse Duration (sec)

1

D = 0.5 0

0.01

0.02

0.05

0.10

0.20

S IN G L E P U LS E

(T HE RM A L RE S P O N S E )

P

t

2

1

t

DM

N o te s :

1 . D u ty f ac t or D = t

/ t

2 . P e a k T = P

x Z

+ T

12

J

DM

th J C

C

1.5

2.0

2.5

3.0

- 6 0

- 4 0

- 2 0

0

2 0

4 0

6 0

8 0

100

120

140

160

V

= 1 5 V

80 µ s PU L SE W ID T H

GE

A

T , Ju nc tion T e m perature (°C)

J

I

= 2 4 A

I

= 12A

I

= 6 .0 A

C

C

C