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IRG4BC20FD-S Datasheet(PDF) 1 Page - International Rectifier |
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IRG4BC20FD-S Datasheet(HTML) 1 Page - International Rectifier |
1 / 10 page Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 16 IC @ TC = 100°C Continuous Collector Current 9.0 ICM Pulsed Collector Current Q 64 A ILM Clamped Inductive Load Current R 64 IF @ TC = 100°C Diode Continuous Forward Current 8.0 IFM Diode Maximum Forward Current 60 VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 60 PD @ TC = 100°C Maximum Power Dissipation 24 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Parameter Typ. Max. Units RθJC Junction-to-Case - IGBT ––– 2.1 RθJC Junction-to-Case - Diode ––– 3.5 °C/W RθJA Junction-to-Ambient ( PCB Mounted,steady-state)* ––– 80 Wt Weight 1.44 ––– g (oz) IRG4BC20FD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Features Features Features Features E G n-c hannel C VCES = 600V VCE(on) typ. = 1.66V @VGE = 15V, IC = 9.0A Thermal Resistance Fast CoPack IGBT 4/24/2000 Absolute Maximum Ratings • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard D2Pak package Benefits • Generation 4 IGBTs offer highest efficiencies available • IGBTs optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs W 2 D Pa k * When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com 1 PD -91783A |
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