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IRG4BC20FD-S Datasheet(PDF) 1 Page - International Rectifier

Part # IRG4BC20FD-S
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG4BC20FD-S Datasheet(HTML) 1 Page - International Rectifier

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Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current
16
IC @ TC = 100°C
Continuous Collector Current
9.0
ICM
Pulsed Collector Current
Q
64
A
ILM
Clamped Inductive Load Current
R
64
IF @ TC = 100°C
Diode Continuous Forward Current
8.0
IFM
Diode Maximum Forward Current
60
VGE
Gate-to-Emitter Voltage
± 20
V
PD @ TC = 25°C
Maximum Power Dissipation
60
PD @ TC = 100°C
Maximum Power Dissipation
24
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
°C
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case - IGBT
–––
2.1
RθJC
Junction-to-Case - Diode
–––
3.5
°C/W
RθJA
Junction-to-Ambient ( PCB Mounted,steady-state)*
–––
80
Wt
Weight
1.44
–––
g (oz)
IRG4BC20FD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Features
Features
Features
Features
E
G
n-c hannel
C
VCES = 600V
VCE(on) typ. = 1.66V
@VGE = 15V, IC = 9.0A
Thermal Resistance
Fast CoPack IGBT
4/24/2000
Absolute Maximum Ratings
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
• Industry standard D2Pak package
Benefits
• Generation 4 IGBTs offer highest efficiencies
available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
W
2
D Pa k
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
www.irf.com
1
PD -91783A


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