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IRFZ46N Datasheet(PDF) 1 Page - International Rectifier |
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IRFZ46N Datasheet(HTML) 1 Page - International Rectifier |
1 / 8 page IRFZ46N HEXFET® Power MOSFET 01/24/01 Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.4 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 Thermal Resistance www.irf.com 1 VDSS = 55V RDS(on) = 16.5mΩ ID = 53A S D G TO-220AB Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description PD-91277 Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 53 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 37 A IDM Pulsed Drain Current 180 PD @TC = 25°C Power Dissipation 107 W Linear Derating Factor 0.71 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current 28 A EAR Repetitive Avalanche Energy 11 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) |
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