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IRFY240CM Datasheet(PDF) 1 Page - International Rectifier |
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IRFY240CM Datasheet(HTML) 1 Page - International Rectifier |
1 / 6 page Product Summary Part Number BVDSS RDS(on) ID IRFY240CM 200V 0.18 Ω 16A Provisional Data Sheet No. PD 9.1289B HEXFET® POWER MOSFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi- cient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET transistors also feature all of the well-estab- lished advantages of MOSFETs, such as voltage con- trol, very fast switching, ease of paralleling and electri- cal parameter temperature stability. They are well-suited for applications such as switching power supplies, mo- tor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package elimi- nates the need for additional isolating material between the device and the heatsink. This improves thermal effi- ciency and reduces drain capacitance. IRFY240CM Features n Hermetically Sealed n Electrically Isolated n Simple Drive Requirements n Ease of Paralleling N-CHANNEL 200 Volt, 0.18 Ω HEXFET Absolute Maximum Ratings Parameter IRFY240CM Units ID @ VGS=10V, TC = 25°C Continuous Drain Current 16 ID @ VGS=10V, TC = 100°C Continuous Drain Current 10.2 A IDM Pulsed Drain Current 64 PD @ TC = 25°C Max. Power Dissipation 100 W Linear Derating Factor 0.8 W/K VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalance Energy 580 mJ IAR Avalance Current 16 A EAR Repetitive Avalanche Energy 10 mJ dv/dt Peak Diode Recovery dv/dt 5 V/ns TJ Operating Junction -55 to 150 Tstg Storage Temperature Range °C LeadTemperature 300 (0.063 in (1.6mm) from case for 10 sec) Weight 4.3 (typical) g °C n Ceramic Eyelets Next Data Sheet Index Previous Datasheet To Order |
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