IRFY240CM datasheet(1/6 Pages) IRF

Part #	IRFY240CM

Description	POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=16A)

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Manufacturer	IRF [International Rectifier]

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Product Summary

Part Number

BVDSS

RDS(on)

ID

IRFY240CM

200V

0.18

Ω

16A

Provisional Data Sheet No. PD 9.1289B

HEXFET® POWER MOSFET

HEXFET technology is the key to International Rectifier’s

advanced line of power MOSFET transistors. The effi-

cient geometry design achieves very low on-state re-

sistance combined with high transconductance.

HEXFET transistors also feature all of the well-estab-

lished advantages of MOSFETs, such as voltage con-

trol, very fast switching, ease of paralleling and electri-

cal parameter temperature stability. They are well-suited

for applications such as switching power supplies, mo-

tor controls, inverters, choppers, audio amplifiers, high

energy pulse circuits, and virtually any application where

high reliability is required.

The HEXFET transistor’s totally isolated package elimi-

nates the need for additional isolating material between

the device and the heatsink. This improves thermal effi-

ciency and reduces drain capacitance.

IRFY240CM

Features

n Hermetically Sealed

n Electrically Isolated

n Simple Drive Requirements

n Ease of Paralleling

N-CHANNEL

200 Volt, 0.18

Ω HEXFET

Absolute Maximum Ratings

Parameter

IRFY240CM

Units

ID @ VGS=10V, TC = 25°C

Continuous Drain Current

16

ID @ VGS=10V, TC = 100°C

Continuous Drain Current

10.2

A

IDM

Pulsed Drain Current

64

PD @ TC = 25°C

Max. Power Dissipation

100

W

Linear Derating Factor

0.8

W/K

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalance Energy

580

mJ

IAR

Avalance Current

16

A

EAR

Repetitive Avalanche Energy

10

mJ

dv/dt

Peak Diode Recovery dv/dt

5

V/ns

TJ

Operating Junction

-55 to 150

Tstg

Storage Temperature Range

°C

LeadTemperature

300 (0.063 in (1.6mm) from

case for 10 sec)

Weight

4.3 (typical)

g

°C

n Ceramic Eyelets

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