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IRFR9214 Datasheet(PDF) 2 Page - International Rectifier |
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IRFR9214 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRFR/U9214 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -250 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.25 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 3.0 Ω VGS = -10V, ID = -1.7A VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 0.9 ––– ––– S VDS = -50V, ID = -1.7A ––– ––– -100 µA VDS = -250V, VGS = 0V ––– ––– -500 VDS = -200V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 14 ID = -1.7A Qgs Gate-to-Source Charge ––– ––– 3.1 nC VDS = -200V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 6.8 VGS = -10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 11 ––– VDD = -125V tr Rise Time ––– 14 ––– ID = -1.7A td(off) Turn-Off Delay Time ––– 20 ––– RG =21 Ω tf Fall Time ––– 17 ––– RD =70 See Fig. 10 Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 220 ––– VGS = 0V Coss Output Capacitance ––– 75 ––– pF VDS = -25V Crss Reverse Transfer Capacitance ––– 11 ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– -5.8 V TJ = 25°C, IS = -2.7A, VGS = 0V trr Reverse Recovery Time ––– 150 220 ns TJ = 25°C, IF = -1.7A Qrr Reverse Recovery Charge ––– 870 1300 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) -2.7 -11 A Notes: ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994
This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact Starting T J = 25°C, L = 27 mH RG = 25Ω, IAS = -2.7A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ -2.7A, di/dt ≤ 600A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. S D G nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current S D G |
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